MQ2N5115

Teknik Özellikler

Transistor Polarity

P-Channel

Pd Power Dissipation

500 mW

Voltage Cutoff Vgs Off Id

3 V @ 1 nA

Voltage Breakdown Vbrgss

30 V

Drainsource Current At Vgs0

7 mA

Input Capacitance Ciss Max Vds

25pF @ 15V

Kılıf / Paket

TO-206AA, TO-18-3 Metal Can

Çalışma Sıcaklığı

-65°C ~ 200°C (TJ)

Paket

Bulk

Seri

Military, MIL-PRF-19500

Rds On Drainsource Resistance

100 Ohms

Current Drain Idss Vds Vgs0

15 mA @ 15 V

Maximum Drain Gate Voltage

30 V

Fet Type

P-Channel

Ürün Durumu

Active

Fabrika Paket Adedi

1

Tip

JFET

Maks. Çalışma Sıcaklığı

+ 200 C

Minimum Operating Temperature

- 65 C

Gatesource Cutoff Voltage

6 V

Montaj Stili

Through Hole

Vds Drainsource Breakdown Voltage

30 V

Technology

Si

Tedarikçi Cihaz Paketi

TO-18 (TO-206AA)

Vgs Gatesource Breakdown Voltage

30 V

Drain To Source Voltage Vdss

30 V

Montaj Tipi

Through Hole

Configuration

Single

Resistance Rdson

100 Ohms

Ürün Tipi

JFETs

Power Max

500 mW