LND150N8-G

Teknik Özellikler

Transistor Element Material

SILICON

Fabrika Tedarik Süresi

5 Weeks

Kurşunsuz

Lead Free

Kılıf / Paket

TO-243AA

Radyasyon Dayanımı

No

Montaj

Surface Mount

Pin Sayısı

4

Weight

52.786812mg

Fet Type

N-Channel

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

20V

Additional Feature

HIGH INPUT IMPEDANCE

Power Dissipation Max

1.6W Ta

Continuous Drain Current Id

30mA

Genişlik

2.6mm

Fall Time Typ

450 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Transistor Application

SWITCHING

Yayın Yılı

2005

Case Connection

SOURCE

Terminal Formu

FLAT

Parça Durumu

Active

Contact Plating

Tin

Current Continuous Drain Id25

30mA Tj

Number Of Elements

1

Turn Off Delay Time

100 ns

Reach Svhc

No SVHC

Ambalaj

Tape & Reel (TR)

Fet Feature

Depletion Mode

Drive Voltage Max Rds On Min Rds On

0V

Power Dissipation

1.2W

Rds On Max Id Vgs

1000 Ω @ 500μA, 0V

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

260

JESD-609 Kodu

e3

Yükseklik

1.6mm

Uzunluk

4.6mm

Drain Currentmax Abs Id

0.03A

Drain To Source Breakdown Voltage

500V

Number Of Channels

1