LND150N3-G

Teknik Özellikler

ECCN Kodu

EAR99

JESD-609 Kodu

e3

Yükseklik

5.33mm

Pin Sayısı

3

Fet Type

N-Channel

Weight

219.992299mg

RoHS Durumu

ROHS3 Compliant

Gate To Source Voltage Vgs

20V

Uzunluk

5.21mm

Additional Feature

HIGH INPUT IMPEDANCE

Transistor Element Material

SILICON

Reach Svhc

No SVHC

Ambalaj

Bulk

Kurşunsuz

Lead Free

Fabrika Tedarik Süresi

8 Weeks

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA)

Fet Feature

Depletion Mode

Drive Voltage Max Rds On Min Rds On

0V

Power Dissipation

740mW

Radyasyon Dayanımı

No

Montaj

Through Hole

Rds On Max Id Vgs

1000 Ω @ 500μA, 0V

Transistor Application

SWITCHING

Vgs Max

±20V

Yayın Yılı

2014

Terminal Pozisyonu

BOTTOM

Rise Time

450ns

Element Configuration

Single

Terminal Sayısı

3

Parça Durumu

Active

Input Capacitance Ciss Max Vds

10pF @ 25V

Current Continuous Drain Id25

30mA Tj

Number Of Elements

1

Contact Plating

Tin

Turn Off Delay Time

100 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Turn On Delay Time

90 ns

Drain To Source Breakdown Voltage

500V

Number Of Channels

1

Power Dissipation Max

740mW Ta