DN3535N8-G

Teknik Özellikler

Input Capacitance Ciss Max Vds

360pF @ 25V

Case Connection

DRAIN

JESD-609 Kodu

e3

Terminal Sayısı

3

Fall Time Typ

20 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation

1.6W

Rds On Max Id Vgs

10 Ω @ 150mA, 0V

Weight

52.786812mg

Drain To Source Breakdown Voltage

350V

Current Continuous Drain Id25

230mA Tj

Fet Type

N-Channel

Turn On Delay Time

15 ns

Number Of Channels

1

Reach Svhc

No SVHC

Gate To Source Voltage Vgs

20V

Pulsed Drain Currentmax Idm

0.5A

Montaj

Surface Mount

Fet Feature

Depletion Mode

Fabrika Tedarik Süresi

18 Weeks

Genişlik

2.6mm

Power Dissipation Max

1.6W Ta

Uzunluk

4.6mm

Continuous Drain Current Id

230mA

RoHS Durumu

ROHS3 Compliant

Contact Plating

Tin

Number Of Elements

1

Element Configuration

Single

Kılıf / Paket

TO-243AA

Drive Voltage Max Rds On Min Rds On

0V

Transistor Application

SWITCHING

Ambalaj

Tape & Reel (TR)

Tepe Reflow Süresi (maks. sn)

40

Yayın Yılı

2008

Turn Off Delay Time

20 ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Parça Durumu

Active

Kurşunsuz

Lead Free

Transistor Element Material

SILICON

ECCN Kodu

EAR99