DN3135N8-G

Teknik Özellikler

Reach Svhc

No SVHC

Number Of Channels

1

Gate To Source Voltage Vgs

20V

Turn On Delay Time

10 ns

Continuous Drain Current Id

135mA

Uzunluk

4.6mm

Power Dissipation Max

1.3W Ta

Genişlik

2.6mm

Fet Feature

Depletion Mode

Terminal Kaplaması

Matte Tin (Sn)

Montaj

Surface Mount

Fabrika Tedarik Süresi

18 Weeks

JESD-609 Kodu

e3

Terminal Sayısı

3

Gerilim

350V

Case Connection

DRAIN

Input Capacitance Ciss Max Vds

120pF @ 25V

Current Continuous Drain Id25

135mA Tj

Fet Type

N-Channel

Rds On Max Id Vgs

35 Ω @ 150mA, 0V

Qualification Status

Not Qualified

Power Dissipation

1.3W

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

15 ns

Drain To Source Breakdown Voltage

350V

Weight

52.786812mg

Rise Time

15ns

Terminal Formu

FLAT

Vgs Max

±20V

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Akım

135A

Tepe Reflow Sıcaklığı (°C)

260

Additional Feature

LOW THRESHOLD

Pin Sayısı

3

Montaj Tipi

Surface Mount

Yükseklik

1.6mm

Drive Voltage Max Rds On Min Rds On

0V

Transistor Application

SWITCHING

Number Of Elements

1