DN2535N3-G

Teknik Özellikler

Input Capacitance Ciss Max Vds

300pF @ 25V

Element Configuration

Single

Kılıf / Paket

TO-226-3, TO-92-3 (TO-226AA)

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Contact Plating

Tin

Terminal Sayısı

3

Transistor Application

SWITCHING

Drive Voltage Max Rds On Min Rds On

0V

JESD-609 Kodu

e3

Yayın Yılı

2008

Weight

453.59237mg

Turn Off Delay Time

15 ns

Drain To Source Breakdown Voltage

350V

Ambalaj

Bulk

Fall Time Typ

20 ns

Nem Hassasiyeti (MSL)

1 (Unlimited)

Power Dissipation

1W

Rds On Max Id Vgs

25 Ω @ 120mA, 0V

Fet Type

N-Channel

Kurşunsuz

Lead Free

Çalışma Sıcaklığı

-55°C~150°C TJ

Current Continuous Drain Id25

120mA Tj

Parça Durumu

Active

Feedback Capmax Crss

5 pF

ECCN Kodu

EAR99

Transistor Element Material

SILICON

Turn On Delay Time

10 ns

Vgs Max

±20V

Gate To Source Voltage Vgs

20V

Number Of Channels

1

Reach Svhc

No SVHC

Rise Time

15ns

Radyasyon Dayanımı

No

Terminal Pozisyonu

BOTTOM

Fabrika Tedarik Süresi

5 Weeks

Montaj

Through Hole

Fet Feature

Depletion Mode

Montaj Tipi

Through Hole

Yükseklik

5.33mm