DN2450N8-G

Teknik Özellikler

Configuration

SINGLE WITH BUILT-IN DIODE

Terminal Kaplaması

Matte Tin (Sn)

Fet Feature

Depletion Mode

Montaj Tipi

Surface Mount

Montaj

Surface Mount

Terminal Pozisyonu

SINGLE

Fabrika Tedarik Süresi

9 Weeks

Additional Feature

LOW THRESHOLD

Tepe Reflow Sıcaklığı (°C)

260

Continuous Drain Current Id

230mA

Pin Sayısı

3

Power Dissipation Max

1.6W Ta

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Reach Svhc

No SVHC

Pulsed Drain Currentmax Idm

0.9A

Gate To Source Voltage Vgs

20V

Vgs Max

±20V

Terminal Formu

FLAT

Power Dissipation

1.6W

Rds On Max Id Vgs

10 Ω @ 300mA, 0V

Tepe Reflow Süresi (maks. sn)

40

Ambalaj

Tape & Reel (TR)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

500V

Yayın Yılı

2013

Weight

52.786812mg

Parça Durumu

Active

Current Continuous Drain Id25

230mA Tj

Çalışma Sıcaklığı

-55°C~150°C TJ

Fet Type

N-Channel

Kurşunsuz

Lead Free

Number Of Elements

1

RoHS Durumu

ROHS3 Compliant

Case Connection

DRAIN

Kılıf / Paket

TO-243AA

Input Capacitance Ciss Max Vds

200pF @ 25V

JESD-609 Kodu

e3

Drive Voltage Max Rds On Min Rds On

0V

Transistor Application

SWITCHING