APT84M50B2

Teknik Özellikler

Vgs Gatesource Voltage

- 30 V, + 30 V

Fabrika Paket Adedi

1

Number Of Channels

1 Channel

Pd Power Dissipation

1.135 kW

Drive Voltage Max Rds On Min Rds On

10V

Id Continuous Drain Current

84 A

Montaj Tipi

Through Hole

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Channel Mode

Enhancement

Maks. Çalışma Sıcaklığı

+ 150 C

Current Continuous Drain Id25

84A (Tc)

Typical Turnoff Delay Time

155 ns

Rise Time

70 ns

Typical Turnon Delay Time

60 ns

Temel Ürün No

APT84M50

Rds On Drainsource Resistance

65 mOhms

Fet Type

N-Channel

Ürün Durumu

Active

RoHS

Details

Kılıf / Paket

T-MAX-3

Forward Transconductance Min

65 S

Paket

Tube

Transistor Type

1 N-Channel

Montaj Stili

Through Hole

Vds Drainsource Breakdown Voltage

500 V

Vgsth Max Id

5V @ 2.5mA

Rds On Max Id Vgs

65mOhm @ 42A, 10V

Minimum Operating Temperature

- 55 C

Qg Gate Charge

340 nC

Configuration

Single

Tedarikçi Cihaz Paketi

T-MAX™ [B2]

Vgs Max

±30V

Ambalaj

Tube

Gate Charge Qg Max Vgs

340 nC @ 10 V

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

3 V

Input Capacitance Ciss Max Vds

13500 pF @ 25 V

Power Dissipation Max

1135W (Tc)

Drain To Source Voltage Vdss

500 V

Fall Time

50 ns