Adet bazlı fiyat
- 1+ adet$14.32
- 10+ adet$13.51
- 100+ adet$12.75
- 500+ adet$12.03
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Birim Ağırlık
- 0.218699 oz
- Case Connection
- DRAIN
- Drain To Source Voltage Vdss
- 800 V
- Drainsource On Resistancemax
- 0.65 Ω
- Terminal Pozisyonu
- SINGLE
- Number Of Elements
- 1
- Vgs Th Gatesource Threshold Voltage
- 2 V
- Transistor Polarity
- N-Channel
- Ambalaj
- Tube
- Tepe Reflow Sıcaklığı (°C)
- 245
- Tedarikçi Cihaz Paketi
- D3 [S]
- Qg Gate Charge
- 225 nC
- Package Shape
- RECTANGULAR
- Seri
- POWER MOS V®
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Minimum Operating Temperature
- - 55 C
- Vds Drainsource Breakdown Voltage
- 800 V
- Paket
- Tube
- Reflow Temperaturemax S
- 30
- Yüzey Montaj
- YES
- Jesd30 Code
- R-PSSO-G2
- Package Style
- SMALL OUTLINE
- REACH Uyumluluk Kodu
- compliant
- Üretici Parça No
- APT8065SVRG
- Ürün Durumu
- Active
- Fet Type
- N-Channel
- Channel Mode
- Enhancement
- Risk Rank
- 5.29
- Current Continuous Drain Id25
- 13A (Tc)
- Polaritychannel Type
- N-CHANNEL
- Fabrika Paket Adedi
- 1
- Terminal Formu
- GULL WING
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Package Description
- SMALL OUTLINE, R-PSSO-G2
- Terminal Kaplaması
- PURE MATTE TIN
- Part Life Cycle Code
- Active
- Input Capacitance Ciss Max Vds
- 3700 pF @ 25 V
- Avalanche Energy Rating Eas
- 1210 mJ
- Pin Sayısı
- 3
- Gate Charge Qg Max Vgs
- 225 nC @ 10 V
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