APT8052BFLLG

Teknik Özellikler

Case Connection

DRAIN

Drainsource On Resistancemax

0.52 Ω

Drain To Source Voltage Vdss

800 V

Vgs Th Gatesource Threshold Voltage

3 V

Terminal Pozisyonu

SINGLE

Number Of Elements

1

Transistor Polarity

N-Channel

Power Dissipationmax Abs

298 W

Birim Ağırlık

0.211644 oz

Qg Gate Charge

75 nC

Package Shape

RECTANGULAR

Seri

POWER MOS 7®

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Minimum Operating Temperature

- 55 C

Ambalaj

Tube

Tedarikçi Cihaz Paketi

TO-247 [B]

Jesd30 Code

R-PSFM-T3

Yüzey Montaj

NO

Package Style

FLANGE MOUNT

REACH Uyumluluk Kodu

unknown

Üretici Parça No

APT8052BFLLG

Ürün Durumu

Active

Fet Type

N-Channel

Vds Drainsource Breakdown Voltage

800 V

Paket

Tube

Polaritychannel Type

N-CHANNEL

Fabrika Paket Adedi

1

Terminal Formu

THROUGH-HOLE

Vgs Gatesource Voltage

- 30 V, + 30 V

Risk Rank

2.09

Current Continuous Drain Id25

15A (Tc)

Channel Mode

Enhancement

Part Life Cycle Code

Active

Input Capacitance Ciss Max Vds

2035 pF @ 25 V

Avalanche Energy Rating Eas

1210 mJ

Gate Charge Qg Max Vgs

75 nC @ 10 V

Number Of Terminals

3

Package Description

FLANGE MOUNT, R-PSFM-T3

Operating Temperaturemin

-55 °C

Drain Currentmax Abs Id

15 A