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Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Transistor Polarity
- N-Channel
- Gate Charge Qg Max Vgs
- 85 nC @ 10 V
- Drain To Source Voltage Vdss
- 800 V
- Input Capacitance Ciss Max Vds
- 2500 pF @ 25 V
- Vgs Th Gatesource Threshold Voltage
- 5 V
- Continuous Drain Current Id
- 20
- Birim Ağırlık
- 0.211644 oz
- Minimum Operating Temperature
- - 55 C
- Vgsth Max Id
- 5V @ 1mA
- Rds On Max Id Vgs
- 430mOhm @ 10A, 10V
- Seri
- POWER MOS 7®
- Qg Gate Charge
- 85 nC
- Ambalaj
- Tube
- Power Dissipation
- 403
- Tedarikçi Cihaz Paketi
- TO-247 [B]
- Ürün Durumu
- Active
- Rds On Drainsource Resistance
- 430 mOhms
- Fet Type
- N-Channel
- Kılıf / Paket
- TO-247-3
- Paket
- Tube
- Montaj Stili
- Through Hole
- Vds Drainsource Breakdown Voltage
- 800 V
- Channel Type
- N
- Fabrika Paket Adedi
- 1
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Montaj Tipi
- Through Hole
- Id Continuous Drain Current
- 20 A
- Pd Power Dissipation
- 403 W
- Number Of Channels
- 1 Channel
- Maks. Çalışma Sıcaklığı
- + 150 C
- Channel Mode
- Enhancement
- Current Continuous Drain Id25
- 20A (Tc)
- Temel Ürün No
- APT8043
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