Adet bazlı fiyat
- 1+ adet$21.71
- 10+ adet$20.48
- 100+ adet$19.32
- 500+ adet$18.23
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Ürün Durumu
- Active
- Fet Type
- N-Channel
- Rds On Drainsource Resistance
- 300 mOhms
- RoHS
- Details
- Kılıf / Paket
- TO-264-3
- Paket
- Tube
- Vds Drainsource Breakdown Voltage
- 800 V
- Montaj Stili
- Through Hole
- Fabrika Paket Adedi
- 1
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Id Continuous Drain Current
- 27 A
- Montaj Tipi
- Through Hole
- Number Of Channels
- 1 Channel
- Pd Power Dissipation
- 520 W
- Channel Mode
- Enhancement
- Maks. Çalışma Sıcaklığı
- + 150 C
- Current Continuous Drain Id25
- 27A (Tc)
- Temel Ürün No
- APT8030
- Transistor Polarity
- N-Channel
- Gate Charge Qg Max Vgs
- 510 nC @ 10 V
- Drain To Source Voltage Vdss
- 800 V
- Vgs Th Gatesource Threshold Voltage
- 2 V
- Input Capacitance Ciss Max Vds
- 7900 pF @ 25 V
- Birim Ağırlık
- 0.352740 oz
- Minimum Operating Temperature
- - 55 C
- Vgsth Max Id
- 4V @ 2.5mA
- Rds On Max Id Vgs
- 300mOhm @ 500mA, 10V
- Qg Gate Charge
- 510 nC
- Configuration
- Single
- Seri
- POWER MOS V®
- Ambalaj
- Tube
- Tedarikçi Cihaz Paketi
- TO-264 [L]
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