Fiyat için teklif alın
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Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Input Capacitance
- 7.24 nF
- Birim Ağırlık
- 0.352740 oz
- Schedule B
- 8541290080, 8541290080/8541290080/8541290080/8541290080/8541290080
- Transistor Polarity
- N-Channel
- Turn On Delay Time
- 20 ns
- Vgs Th Gatesource Threshold Voltage
- 3 V
- Continuous Drain Current Id
- 52 A
- Drain To Source Voltage Vdss
- 800 V
- Tedarikçi Cihaz Paketi
- 264 MAX™ [L2]
- Ambalaj
- Tube
- Min. Çalışma Sıcaklığı
- -55 °C
- Minimum Operating Temperature
- - 55 C
- Qg Gate Charge
- 285 nC
- Seri
- POWER MOS 7®
- Paket
- Tube
- Radyasyon Dayanımı
- No
- Vds Drainsource Breakdown Voltage
- 800 V
- Fet Type
- N-Channel
- Turn Off Delay Time
- 69 ns
- Ürün Durumu
- Active
- Gate To Source Voltage Vgs
- 30 V
- Channel Mode
- Enhancement
- Current Continuous Drain Id25
- 52A (Tc)
- Maks. Çalışma Sıcaklığı
- 150 °C
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Pin Sayısı
- 3
- Fabrika Paket Adedi
- 1
- Lifecycle Status
- Production (Last Updated: 1 month ago)
- Montaj
- Through Hole
- Gate Charge Qg Max Vgs
- 285 nC @ 10 V
- Input Capacitance Ciss Max Vds
- 7238 pF @ 25 V
- Power Dissipation
- 893
- Rds On Max Id Vgs
- 160mOhm @ 26A, 10V
- Vgsth Max Id
- 5V @ 5mA
- Configuration
- Single
- Montaj Stili
- Through Hole
- Channel Type
- N
- Voltage Rating Dc
- 800 V
- Rds On Drainsource Resistance
- 160 mOhms
- Kurşunsuz
- Lead Free
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