Adet bazlı fiyat
- 1+ adet$83.67
- 10+ adet$78.93
- 100+ adet$74.47
- 500+ adet$70.25
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Birim Ağırlık
- 2.260479 oz
- Transistor Polarity
- N-Channel
- Gate Charge Qg Max Vgs
- 650 nC @ 10 V
- Drain To Source Voltage Vdss
- 800 V
- Input Capacitance Ciss Max Vds
- 9480 pF @ 25 V
- Continuous Drain Current Id
- 51
- Vgs Th Gatesource Threshold Voltage
- 5 V
- Ambalaj
- Tube
- Power Dissipation
- 694
- Tedarikçi Cihaz Paketi
- ISOTOP®
- Minimum Operating Temperature
- - 55 C
- Vgsth Max Id
- 5V @ 5mA
- Rds On Max Id Vgs
- 110mOhm @ 25.5A, 10V
- Seri
- POWER MOS 7®
- Qg Gate Charge
- 285 nC
- Paket
- Tube
- Montaj Stili
- Screw Mount
- Vds Drainsource Breakdown Voltage
- 800 V
- Channel Type
- N
- Ürün Durumu
- Active
- Fet Type
- N-Channel
- Rds On Drainsource Resistance
- 110 mOhms
- Kılıf / Paket
- SOT-227-4, miniBLOC
- RoHS
- Details
- Current Continuous Drain Id25
- 51A (Tc)
- Maks. Çalışma Sıcaklığı
- + 150 C
- Channel Mode
- Enhancement
- Temel Ürün No
- APT8011
- Fabrika Paket Adedi
- 1
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Montaj Tipi
- Chassis Mount
- Id Continuous Drain Current
- 51 A
- Pd Power Dissipation
- 650 W
- Number Of Channels
- 1 Channel
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