APT60N60BCSG

Teknik Özellikler

Rds On Drainsource Resistance

45 mOhms

RoHS

Details

Kılıf / Paket

TO-247-3

Ihs Manufacturer

MICROCHIP TECHNOLOGY INC

Package Body Material

PLASTIC/EPOXY

Channel Type

N

Montaj Stili

Through Hole

Operating Temperaturemax

150 °C

Yükseklik

5.31 mm

Id Continuous Drain Current

60 A

Transistor Application

SWITCHING

Montaj Tipi

Through Hole

Number Of Channels

1 Channel

Jedec95 Code

TO-247

Pd Power Dissipation

431 W

Pulsed Drain Currentmax Idm

230 A

Transistor Element Material

SILICON

Maks. Çalışma Sıcaklığı

+ 150 C

Temel Ürün No

APT60N60

Drain Currentmax Id

60 A

Typical Turnoff Delay Time

100 ns

Rise Time

20 ns

Typical Turnon Delay Time

30 ns

Avalanche Energy Rating Eas

1950 mJ

Gate Charge Qg Max Vgs

190 nC @ 10 V

Number Of Terminals

3

Part Life Cycle Code

Active

Input Capacitance Ciss Max Vds

7200 pF @ 25 V

Operating Temperaturemin

-55 °C

Package Description

FLANGE MOUNT, R-PSFM-T3

Rds On Max Id Vgs

45mOhm @ 44A, 10V

Vgsth Max Id

3.9V @ 3mA

Genişlik

16.26 mm

Operating Mode

ENHANCEMENT MODE

Configuration

Single

Power Dissipation

431

Ds Breakdown Voltagemin

600 V

Üretici Parça No

APT60N60BCSG

Ürün Durumu

Active

Fet Type

N-Channel