Adet bazlı fiyat
- 1+ adet$26.18
- 10+ adet$24.70
- 100+ adet$23.30
- 500+ adet$21.98
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Maks. Çalışma Sıcaklığı
- + 150 C
- Montaj Stili
- Through Hole
- Continuous Drain Current Id
- 49
- Channel Mode
- Enhancement
- Montaj Tipi
- Through Hole
- Pd Power Dissipation
- 625 W
- Vgs Th Gatesource Threshold Voltage
- 2 V
- RoHS
- Details
- Rds On Drainsource Resistance
- 110 mOhms
- Number Of Channels
- 1 Channel
- Vgsth Max Id
- 4V @ 2.5mA
- Channel Type
- N
- Gate Charge Qg Max Vgs
- 450 nC @ 10 V
- Ambalaj
- Tube
- Configuration
- Single
- Seri
- POWER MOS V®
- Minimum Operating Temperature
- - 55 C
- Ürün Durumu
- Active
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Input Capacitance Ciss Max Vds
- 8900 pF @ 25 V
- Vds Drainsource Breakdown Voltage
- 600 V
- Transistor Polarity
- N-Channel
- Fabrika Paket Adedi
- 1
- Fet Type
- N-Channel
- Id Continuous Drain Current
- 49 A
- Birim Ağırlık
- 0.208116 oz
- Kılıf / Paket
- T-MAX-3
- Drain To Source Voltage Vdss
- 600 V
- Paket
- Tube
- Qg Gate Charge
- 450 nC
- Tedarikçi Cihaz Paketi
- T-MAX™ [B2]
- Power Dissipation
- 625
- Temel Ürün No
- APT6011
- Rds On Max Id Vgs
- 110mOhm @ 24.5A, 10V
- Current Continuous Drain Id25
- 49A (Tc)
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