APT56F50L

Teknik Özellikler

Vgs Gatesource Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Seri

POWER MOS 8™

Configuration

Single

Input Capacitance

8.8 nF

Lifecycle Status

Production (Last Updated: 2 months ago)

Vgs Th Gatesource Threshold Voltage

4 V

Vgs Max

±30V

RoHS

Details

Rds On Drainsource Resistance

100 mOhms

Channel Mode

Enhancement

Continuous Drain Current Id

56 A

Max Power Dissipation

780 W

Forward Transconductance Min

43 S

Rds On Max Id Vgs

100mOhm @ 28A, 10V

Temel Ürün No

APT56F50

Montaj

Through Hole

Tedarikçi Cihaz Paketi

TO-264 [L]

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Radyasyon Dayanımı

No

Turn Off Delay Time

100 ns

Id Continuous Drain Current

56 A

Fabrika Paket Adedi

1

Min. Çalışma Sıcaklığı

-55 °C

Vds Drainsource Breakdown Voltage

500 V

Ürün Durumu

Active

Input Capacitance Ciss Max Vds

8800 pF @ 25 V

Fall Time

33 ns

Transistor Polarity

N-Channel

Power Dissipation Max

780W (Tc)

Ambalaj

Tube

Gate Charge Qg Max Vgs

220 nC @ 10 V

Vgsth Max Id

5V @ 2.5mA

Number Of Elements

1

Number Of Channels

1 Channel

Montaj Stili

Through Hole

Maks. Çalışma Sıcaklığı

+ 150 C

Pd Power Dissipation

780 W

Gate To Source Voltage Vgs

30 V

Montaj Tipi

Through Hole