APT56F50B2

Teknik Özellikler

Operating Temperaturemax

150 °C

Drain To Source Voltage Vdss

500 V

Yüzey Montaj

NO

Kılıf / Paket

T-MAX-3

Drive Voltage Max Rds On Min Rds On

10V

Birim Ağırlık

0.208116 oz

Transistor Application

SWITCHING

REACH Uyumluluk Kodu

unknown

Turn On Delay Time

38 ns

Typical Turnon Delay Time

38 ns

Fet Type

N-Channel

Rds On Max

100 mΩ

Current Continuous Drain Id25

56A (Tc)

Additional Feature

AVALANCHE RATED

Power Dissipation

780 W

Transistor Element Material

SILICON

Jesd30 Code

R-PSFM-T3

Typical Turnoff Delay Time

100 ns

Üretici Parça No

APT56F50B2

Avalanche Energy Rating Eas

1200 mJ

Paket

Tube

Qg Gate Charge

220 nC

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Gate Charge Qg Max Vgs

220 nC @ 10 V

Vgsth Max Id

5V @ 2.5mA

Qualification Status

Not Qualified

Part Package Code

TO-247AB

Number Of Elements

1

Number Of Channels

1 Channel

Kurşunsuz Kodu

Yes

Package Description

ROHS COMPLIANT PACKAGE-3

Drain Currentmax Id

56 A

Ihs Manufacturer

MICROSEMI CORP

Pd Power Dissipation

780 W

Montaj Tipi

Through Hole

Gate To Source Voltage Vgs

30 V

Yükseklik

21.46 mm

Montaj Stili

Through Hole

Maks. Çalışma Sıcaklığı

+ 150 C

Maks. Çalışma Sıcaklığı

150 °C