Adet bazlı fiyat
- 1+ adet$7.46
- 10+ adet$7.04
- 100+ adet$6.64
- 500+ adet$6.27
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Transistor Polarity
- N-Channel
- Akım Değeri
- 22 A
- Input Capacitance Ciss Max Vds
- 1900 pF @ 25 V
- Ürün Durumu
- Active
- Package Style
- FLANGE MOUNT
- Case Connection
- DRAIN
- JESD-609 Kodu
- e1
- Vds Drainsource Breakdown Voltage
- 500 V
- Pulsed Drain Currentmax Idm
- 88 A
- Power Dissipation Max
- 265W (Tc)
- Drainsource On Resistancemax
- 0.24 Ω
- Ambalaj
- Tube
- Terminal Pozisyonu
- SINGLE
- Vgsth Max Id
- 5V @ 1mA
- Gate Charge Qg Max Vgs
- 43 nC @ 10 V
- Part Package Code
- TO-247AD
- Package Description
- FLANGE MOUNT, R-PSFM-T3
- Number Of Channels
- 1 Channel
- Number Of Elements
- 1
- Drain Currentmax Id
- 22 A
- Montaj Tipi
- Through Hole
- Gate To Source Voltage Vgs
- 30 V
- Ihs Manufacturer
- MICROSEMI CORP
- Pd Power Dissipation
- 265 W
- Montaj Stili
- Through Hole
- Maks. Çalışma Sıcaklığı
- + 150 C
- Maks. Çalışma Sıcaklığı
- 150 °C
- Rise Time
- 6 ns
- Current Continuous Drain Id25
- 22A (Tc)
- Transistor Element Material
- SILICON
- Power Dissipation
- 265 W
- Jesd30 Code
- R-PSFM-T3
- Üretici Parça No
- APT5024BLLG
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Avalanche Energy Rating Eas
- 960 mJ
- Paket
- Tube
- Qg Gate Charge
- 43 nC
- Yüzey Montaj
- NO
- Kılıf / Paket
- TO-247-3
- Drive Voltage Max Rds On Min Rds On
- 10V
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