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Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Pd Power Dissipation
- 265 W
- Montaj Tipi
- Through Hole
- Gate To Source Voltage Vgs
- 30 V
- Montaj Stili
- Through Hole
- Maks. Çalışma Sıcaklığı
- + 150 C
- Maks. Çalışma Sıcaklığı
- 150 °C
- Rise Time
- 6 ns
- Gate Charge Qg Max Vgs
- 43 nC @ 10 V
- Vgsth Max Id
- 5V @ 1mA
- Number Of Channels
- 1 Channel
- Number Of Elements
- 1
- Ambalaj
- Tube
- Akım Değeri
- 22 A
- Transistor Polarity
- N-Channel
- Vds Drainsource Breakdown Voltage
- 500 V
- Ürün Durumu
- Active
- Input Capacitance Ciss Max Vds
- 1900 pF @ 25 V
- Turn On Delay Time
- 8 ns
- Fet Type
- N-Channel
- Rds On Max
- 240 mΩ
- Drain To Source Voltage Vdss
- 500 V
- Kılıf / Paket
- TO-247-3
- Birim Ağırlık
- 0.211644 oz
- Qg Gate Charge
- 43 nC
- Paket
- Tube
- Current Continuous Drain Id25
- 22A (Tc)
- Power Dissipation
- 265 W
- Channel Mode
- Enhancement
- Continuous Drain Current Id
- 22 A
- Voltage Rating Dc
- 500 V
- Max Power Dissipation
- 265 W
- Rds On Drainsource Resistance
- 240 mOhms
- RoHS
- Compliant
- Lifecycle Status
- Production (Last Updated: 1 month ago)
- Vgs Th Gatesource Threshold Voltage
- 3 V
- Configuration
- Single
- Input Capacitance
- 1.9 nF
- Minimum Operating Temperature
- - 55 C
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Seri
- POWER MOS 7®
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