Adet bazlı fiyat
- 1+ adet$12.14
- 10+ adet$11.45
- 100+ adet$10.80
- 500+ adet$10.19
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Tedarikçi Cihaz Paketi
- D3 [S]
- Qg Gate Charge
- 200 nC
- Paket
- Tube
- Power Dissipation
- 370
- Current Continuous Drain Id25
- 30A (Tc)
- Temel Ürün No
- APT5017
- Rds On Max Id Vgs
- 170mOhm @ 500mA, 10V
- Id Continuous Drain Current
- 30 A
- Fabrika Paket Adedi
- 1
- Fet Type
- N-Channel
- Birim Ağırlık
- 0.218699 oz
- Drain To Source Voltage Vdss
- 500 V
- Kılıf / Paket
- D3PAK-3
- Ambalaj
- Tube
- Vds Drainsource Breakdown Voltage
- 500 V
- Minimum Operating Temperature
- - 55 C
- Ürün Durumu
- Active
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Input Capacitance Ciss Max Vds
- 5280 pF @ 25 V
- Transistor Polarity
- N-Channel
- Seri
- POWER MOS V®
- Channel Mode
- Enhancement
- Maks. Çalışma Sıcaklığı
- + 150 C
- Montaj Stili
- SMD/SMT
- Continuous Drain Current Id
- 30
- Pd Power Dissipation
- 370 W
- Montaj Tipi
- Surface Mount
- Channel Type
- N
- Gate Charge Qg Max Vgs
- 300 nC @ 10 V
- Vgsth Max Id
- 4V @ 1mA
- Vgs Th Gatesource Threshold Voltage
- 4 V
- Number Of Channels
- 1 Channel
- Rds On Drainsource Resistance
- 170 mOhms
- RoHS
- Details
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