Adet bazlı fiyat
- 1+ adet$12.03
- 10+ adet$11.35
- 100+ adet$10.70
- 500+ adet$10.10
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Ambalaj
- Tube
- Power Dissipation Max
- 403W (Tc)
- Seri
- POWER MOS 7®
- Vds Drainsource Breakdown Voltage
- 500 V
- Input Capacitance Ciss Max Vds
- 3261 pF @ 25 V
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Ürün Durumu
- Active
- Minimum Operating Temperature
- - 55 C
- Fall Time
- 3 ns
- Transistor Polarity
- N-Channel
- Rise Time
- 6 ns
- Channel Mode
- Enhancement
- Yükseklik
- 5.31 mm
- Maks. Çalışma Sıcaklığı
- + 150 C
- Montaj Stili
- Through Hole
- Pd Power Dissipation
- 403 W
- Montaj Tipi
- Through Hole
- Vgs Th Gatesource Threshold Voltage
- 5 V
- Number Of Channels
- 1 Channel
- Vgs Max
- ±30V
- Rds On Drainsource Resistance
- 140 mOhms
- RoHS
- Details
- Gate Charge Qg Max Vgs
- 72 nC @ 10 V
- Vgsth Max Id
- 5V @ 1mA
- Paket
- Tube
- Qg Gate Charge
- 72 nC
- Çalışma Sıcaklığı
- -55°C ~ 150°C (TJ)
- Typical Turnoff Delay Time
- 23 ns
- Tedarikçi Cihaz Paketi
- TO-247 [B]
- Genişlik
- 16.26 mm
- Tradename
- Power MOS 7
- Current Continuous Drain Id25
- 35A (Tc)
- Temel Ürün No
- APT5014
- Rds On Max Id Vgs
- 140mOhm @ 17.5A, 10V
- Fabrika Paket Adedi
- 1
- Fet Type
- N-Channel
- Typical Turnon Delay Time
- 11 ns
- Id Continuous Drain Current
- 35 A
- Uzunluk
- 21.46 mm
- Birim Ağırlık
- 0.211644 oz
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