APT5014BLLG

Teknik Özellikler

Ambalaj

Tube

Power Dissipation Max

403W (Tc)

Seri

POWER MOS 7®

Vds Drainsource Breakdown Voltage

500 V

Input Capacitance Ciss Max Vds

3261 pF @ 25 V

Vgs Gatesource Voltage

- 30 V, + 30 V

Ürün Durumu

Active

Minimum Operating Temperature

- 55 C

Fall Time

3 ns

Transistor Polarity

N-Channel

Rise Time

6 ns

Channel Mode

Enhancement

Yükseklik

5.31 mm

Maks. Çalışma Sıcaklığı

+ 150 C

Montaj Stili

Through Hole

Pd Power Dissipation

403 W

Montaj Tipi

Through Hole

Vgs Th Gatesource Threshold Voltage

5 V

Number Of Channels

1 Channel

Vgs Max

±30V

Rds On Drainsource Resistance

140 mOhms

RoHS

Details

Gate Charge Qg Max Vgs

72 nC @ 10 V

Vgsth Max Id

5V @ 1mA

Paket

Tube

Qg Gate Charge

72 nC

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Typical Turnoff Delay Time

23 ns

Tedarikçi Cihaz Paketi

TO-247 [B]

Genişlik

16.26 mm

Tradename

Power MOS 7

Current Continuous Drain Id25

35A (Tc)

Temel Ürün No

APT5014

Rds On Max Id Vgs

140mOhm @ 17.5A, 10V

Fabrika Paket Adedi

1

Fet Type

N-Channel

Typical Turnon Delay Time

11 ns

Id Continuous Drain Current

35 A

Uzunluk

21.46 mm

Birim Ağırlık

0.211644 oz