APT48M80B2

Teknik Özellikler

Seri

POWER MOS 8™

Vgs Gatesource Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Input Capacitance

9.33 nF

Configuration

Single

Rds On Drainsource Resistance

170 mOhms

RoHS

Details

Vgs Max

±30V

Vgs Th Gatesource Threshold Voltage

3 V

Lifecycle Status

Production (Last Updated: 2 months ago)

Forward Transconductance Min

43 S

Max Power Dissipation

1.135 kW

Continuous Drain Current Id

49 A

Voltage Rating Dc

800 V

Channel Mode

Enhancement

Temel Ürün No

APT48M80

Rds On Max Id Vgs

190mOhm @ 24A, 10V

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Kurşunsuz

Lead Free

Tedarikçi Cihaz Paketi

T-MAX™ [B2]

Montaj

Through Hole

Turn Off Delay Time

230 ns

Radyasyon Dayanımı

No

Transistor Type

1 N-Channel

Min. Çalışma Sıcaklığı

-55 °C

Fabrika Paket Adedi

1

Id Continuous Drain Current

49 A

Akım Değeri

48 A

Fall Time

70 ns

Transistor Polarity

N-Channel

Input Capacitance Ciss Max Vds

9330 pF @ 25 V

Ürün Durumu

Active

Vds Drainsource Breakdown Voltage

800 V

Ambalaj

Tube

Power Dissipation Max

1135W (Tc)

Number Of Elements

1

Number Of Channels

1 Channel

Vgsth Max Id

5V @ 2.5mA

Gate Charge Qg Max Vgs

305 nC @ 10 V

Maks. Çalışma Sıcaklığı

150 °C