Adet bazlı fiyat
- 1+ adet$18.31
- 10+ adet$17.27
- 100+ adet$16.29
- 500+ adet$15.37
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Ambalaj
- Tube
- Power Dissipation Max
- 1135W (Tc)
- Configuration
- Single
- Vds Drainsource Breakdown Voltage
- 800 V
- Minimum Operating Temperature
- - 55 C
- Ürün Durumu
- Active
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Input Capacitance Ciss Max Vds
- 9330 pF @ 25 V
- Transistor Polarity
- N-Channel
- Fall Time
- 70 ns
- Rise Time
- 75 ns
- Forward Transconductance Min
- 43 S
- Channel Mode
- Enhancement
- Maks. Çalışma Sıcaklığı
- + 150 C
- Montaj Stili
- Through Hole
- Continuous Drain Current Id
- 47
- Pd Power Dissipation
- 1.135 kW
- Montaj Tipi
- Through Hole
- Vgs Th Gatesource Threshold Voltage
- 4 V
- Vgs Max
- ±30V
- Rds On Drainsource Resistance
- 210 mOhms
- RoHS
- Details
- Channel Type
- N Channel
- Gate Charge Qg Max Vgs
- 305 nC @ 10 V
- Vgsth Max Id
- 5V @ 2.5mA
- Paket
- Tube
- Qg Gate Charge
- 305 nC
- Çalışma Sıcaklığı
- -55°C ~ 150°C (TJ)
- Typical Turnoff Delay Time
- 230 ns
- Tedarikçi Cihaz Paketi
- TO-264
- Power Dissipation
- 1.135
- Current Continuous Drain Id25
- 47A (Tc)
- Temel Ürün No
- APT44F80
- Rds On Max Id Vgs
- 240mOhm @ 24A, 10V
- Fabrika Paket Adedi
- 1
- Fet Type
- N-Channel
- Typical Turnon Delay Time
- 55 ns
- Id Continuous Drain Current
- 47 A
- Birim Ağırlık
- 0.352740 oz
- Drain To Source Voltage Vdss
- 800 V
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