APT42F50B

Teknik Özellikler

Montaj Tipi

Through Hole

Pd Power Dissipation

625 W

Maks. Çalışma Sıcaklığı

+ 150 C

Montaj Stili

Through Hole

Yükseklik

5.31 mm

Channel Mode

Enhancement

Forward Transconductance Min

32 S

Rise Time

35 ns

Vgsth Max Id

5V @ 1mA

Gate Charge Qg Max Vgs

170 nC @ 10 V

Rds On Drainsource Resistance

110 mOhms

RoHS

Details

Vgs Max

±30V

Number Of Channels

1 Channel

Vgs Th Gatesource Threshold Voltage

4 V

Configuration

Single

Power Dissipation Max

625W (Tc)

Ambalaj

Tube

Transistor Polarity

N-Channel

Fall Time

26 ns

Minimum Operating Temperature

- 55 C

Ürün Durumu

Active

Vgs Gatesource Voltage

- 30 V, + 30 V

Input Capacitance Ciss Max Vds

6810 pF @ 25 V

Vds Drainsource Breakdown Voltage

500 V

Seri

POWER MOS 8™

Id Continuous Drain Current

42 A

Typical Turnon Delay Time

29 ns

Fet Type

N-Channel

Fabrika Paket Adedi

1

Kılıf / Paket

TO-247-3

Drive Voltage Max Rds On Min Rds On

10V

Drain To Source Voltage Vdss

500 V

Birim Ağırlık

0.211644 oz

Uzunluk

21.46 mm

Genişlik

16.26 mm

Tedarikçi Cihaz Paketi

TO-247 [B]

Typical Turnoff Delay Time

80 ns

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Qg Gate Charge

170 nC