APT38F80B2

Teknik Özellikler

Seri

POWER MOS 8™

Fall Time

60 ns

Transistor Polarity

N-Channel

Vds Drainsource Breakdown Voltage

800 V

Minimum Operating Temperature

- 55 C

Ürün Durumu

Active

Vgs Gatesource Voltage

- 30 V, + 30 V

Input Capacitance Ciss Max Vds

8070 pF @ 25 V

Ambalaj

Tube

Configuration

Single

Power Dissipation Max

1040W (Tc)

Number Of Channels

1 Channel

Vgs Max

±30V

RoHS

Details

Rds On Drainsource Resistance

190 mOhms

Vgs Th Gatesource Threshold Voltage

2.5 V

Gate Charge Qg Max Vgs

260 nC @ 10 V

Channel Type

N

Vgsth Max Id

5V @ 2.5mA

Forward Transconductance Min

38 S

Rise Time

65 ns

Pd Power Dissipation

1.04 kW

Montaj Tipi

Through Hole

Channel Mode

Enhancement

Continuous Drain Current Id

41

Montaj Stili

Through Hole

Maks. Çalışma Sıcaklığı

+ 150 C

Current Continuous Drain Id25

41A (Tc)

Rds On Max Id Vgs

240mOhm @ 20A, 10V

Temel Ürün No

APT38F80

Power Dissipation

1.04

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Qg Gate Charge

260 nC

Paket

Tube

Typical Turnoff Delay Time

200 ns

Tedarikçi Cihaz Paketi

T-MAX™ [B2]

Transistor Type

1 N-Channel

Drain To Source Voltage Vdss

800 V

Kılıf / Paket

TO-247-3

Drive Voltage Max Rds On Min Rds On

10V