APT34M60S

Teknik Özellikler

Fet Type

N-Channel

Typical Turnon Delay Time

37 ns

Ürün Tipi

MOSFET

Transistor Application

SWITCHING

REACH Uyumluluk Kodu

unknown

Drain To Source Voltage Vdss

600 V

Operating Temperaturemax

150 °C

Drive Voltage Max Rds On Min Rds On

10V

Kılıf / Paket

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Yüzey Montaj

YES

Birim Ağırlık

0.218699 oz

Üretici Parça No

APT34M60S

Qg Gate Charge

165 nC

Paket

Tube

Avalanche Energy Rating Eas

930 mJ

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Jesd30 Code

R-PSSO-G2

Typical Turnoff Delay Time

115 ns

Power Dissipationmax Abs

624 W

Additional Feature

AVALANCHE RATED, HIGH RELIABILITY

Current Continuous Drain Id25

36A (Tc)

Transistor Element Material

SILICON

Rise Time

43 ns

Pd Power Dissipation

624 W

Ihs Manufacturer

MICROSEMI CORP

Montaj Tipi

Surface Mount

Maks. Çalışma Sıcaklığı

+ 150 C

Montaj Stili

SMD/SMT

Number Of Elements

1

Number Of Channels

1 Channel

Kurşunsuz Kodu

Yes

Package Description

ROHS COMPLIANT, D3PAK-3/2

Drain Currentmax Id

36 A

Gate Charge Qg Max Vgs

165 nC @ 10 V

Vgsth Max Id

5V @ 1mA

Qualification Status

Not Qualified

Terminal Pozisyonu

SINGLE

Ambalaj

Tube

Drainsource On Resistancemax

0.19 Ω

Power Dissipation Max

624W (Tc)