Adet bazlı fiyat
- 1+ adet$4.43
- 10+ adet$4.18
- 100+ adet$3.94
- 500+ adet$3.72
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Qg Gate Charge
- 115 nC
- Paket
- Tube
- Çalışma Sıcaklığı
- -55°C ~ 150°C (TJ)
- Tedarikçi Cihaz Paketi
- TO-247 [B]
- Typical Turnoff Delay Time
- 50 ns
- Genişlik
- 16.26 mm
- Tradename
- Power MOS 8
- Rds On Max Id Vgs
- 190mOhm @ 14A, 10V
- Temel Ürün No
- APT30F50
- Current Continuous Drain Id25
- 30A (Tc)
- Fabrika Paket Adedi
- 1
- Fet Type
- N-Channel
- Id Continuous Drain Current
- 30 A
- Typical Turnon Delay Time
- 20 ns
- Birim Ağırlık
- 0.211644 oz
- Uzunluk
- 21.46 mm
- Kılıf / Paket
- TO-247-3
- Drive Voltage Max Rds On Min Rds On
- 10V
- Drain To Source Voltage Vdss
- 500 V
- Ambalaj
- Tube
- Power Dissipation Max
- 415W (Tc)
- Configuration
- Single
- Seri
- POWER MOS 8™
- Minimum Operating Temperature
- - 55 C
- Ürün Durumu
- Active
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Input Capacitance Ciss Max Vds
- 4525 pF @ 25 V
- Vds Drainsource Breakdown Voltage
- 500 V
- Transistor Polarity
- N-Channel
- Fall Time
- 17 ns
- Rise Time
- 23 ns
- Forward Transconductance Min
- 22 S
- Maks. Çalışma Sıcaklığı
- + 150 C
- Montaj Stili
- Through Hole
- Channel Mode
- Enhancement
- Yükseklik
- 5.31 mm
- Montaj Tipi
- Through Hole
- Pd Power Dissipation
- 415 W
- Vgs Th Gatesource Threshold Voltage
- 4 V
- RoHS
- Details
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