APT24M120L

Teknik Özellikler

Transistor Polarity

N-Channel

Birim Ağırlık

0.352740 oz

Power Dissipation

1.04

Yükseklik

5.21 mm

Fall Time

42 ns

Gate Charge Qg Max Vgs

260 nC @ 10 V

Tradename

Power MOS 8

Pd Power Dissipation

1.04 kW

Input Capacitance Ciss Max Vds

8370 pF @ 25 V

Continuous Drain Current Id

24

Ambalaj

Tube

Qg Gate Charge

260 nC

Drain To Source Voltage Vdss

1200 V

Rds On Max Id Vgs

680mOhm @ 12A, 10V

Current Continuous Drain Id25

24A (Tc)

Paket

Tube

Typical Turnoff Delay Time

145 ns

Vgsth Max Id

5V @ 2.5mA

Fet Type

N-Channel

Number Of Channels

1 Channel

Genişlik

20.5 mm

Kılıf / Paket

TO-264-3

Power Dissipation Max

1040W (Tc)

Rise Time

27 ns

Vgs Max

±30V

Fabrika Paket Adedi

1

Vgs Th Gatesource Threshold Voltage

4 V

Vgs Gatesource Voltage

- 30 V, + 30 V

Seri

POWER MOS 8™

Channel Mode

Enhancement

Forward Transconductance Min

27 S

Montaj Stili

Through Hole

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Configuration

Single

RoHS

Details

Ürün Durumu

Active

Id Continuous Drain Current

24 A

Vds Drainsource Breakdown Voltage

1.2 kV

Uzunluk

26.49 mm

Maks. Çalışma Sıcaklığı

+ 150 C