Adet bazlı fiyat
- 1+ adet$9.55
- 10+ adet$9.01
- 100+ adet$8.50
- 500+ adet$8.02
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Input Capacitance Ciss Max Vds
- 4860 pF @ 25 V
- Continuous Drain Current Id
- 56
- Ambalaj
- Tube
- Paket
- Tube
- Qg Gate Charge
- 195 nC
- Current Continuous Drain Id25
- 56A (Tc)
- Rds On Max Id Vgs
- 45mOhm @ 500mA, 10V
- Drain To Source Voltage Vdss
- 200 V
- Vgsth Max Id
- 4V @ 1mA
- Kılıf / Paket
- D3PAK-3
- Fet Type
- N-Channel
- Number Of Channels
- 1 Channel
- Birim Ağırlık
- 0.218699 oz
- Transistor Polarity
- N-Channel
- Power Dissipation
- 300
- Gate Charge Qg Max Vgs
- 195 nC @ 10 V
- Pd Power Dissipation
- 300 W
- Vds Drainsource Breakdown Voltage
- 200 V
- Id Continuous Drain Current
- 56 A
- Maks. Çalışma Sıcaklığı
- + 150 C
- Tedarikçi Cihaz Paketi
- D3 [S]
- Ürün Durumu
- Active
- Rds On Drainsource Resistance
- 45 mOhms
- Temel Ürün No
- APT20M45
- Montaj Tipi
- Surface Mount
- Minimum Operating Temperature
- - 55 C
- Channel Type
- N
- Vgs Th Gatesource Threshold Voltage
- 2 V
- Fabrika Paket Adedi
- 1
- Montaj Stili
- SMD/SMT
- Seri
- POWER MOS V®
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Channel Mode
- Enhancement
- Configuration
- Single
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