Adet bazlı fiyat
- 1+ adet$13.00
- 10+ adet$12.26
- 100+ adet$11.57
- 500+ adet$10.91
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Pin Sayısı
- 3
- Risk Rank
- 1.4
- Avalanche Energy Rating Eas
- 1300 mJ
- Ihs Manufacturer
- MICROSEMI CORP
- Rise Time
- 21 ns
- Transistor Element Material
- SILICON
- Montaj Tipi
- Surface Mount
- Typical Turnon Delay Time
- 14 ns
- Number Of Terminals
- 2
- Minimum Operating Temperature
- - 55 C
- Terminal Pozisyonu
- SINGLE
- Jesd30 Code
- R-PSSO-G2
- Ürün Durumu
- Active
- Pulsed Drain Currentmax Idm
- 268 A
- Vds Drainsource Breakdown Voltage
- 200 V
- Uzunluk
- 16.05 mm
- Maks. Çalışma Sıcaklığı
- + 150 C
- Kurşunsuz Kodu
- Yes
- Rds On Drainsource Resistance
- 38 mOhms
- Case Connection
- DRAIN
- REACH Uyumluluk Kodu
- unknown
- Tradename
- Power MOS V
- Drainsource On Resistancemax
- 0.038 Ω
- Transistor Polarity
- N-Channel
- ECCN Kodu
- EAR99
- Operating Temperaturemax
- 150 °C
- Power Dissipation Max
- 370W (Tc)
- Part Life Cycle Code
- Active
- Transistor Application
- SWITCHING
- Input Capacitance Ciss Max Vds
- 6120 pF @ 25 V
- Ambalaj
- Tube
- Drain To Source Voltage Vdss
- 200 V
- Current Continuous Drain Id25
- 67A (Tc)
- Rds On Max Id Vgs
- 38mOhm @ 500mA, 10V
- Package Body Material
- PLASTIC/EPOXY
- Seri
- POWER MOS V®
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Channel Mode
- Enhancement
- Montaj Stili
- SMD/SMT
- Yüzey Montaj
- YES
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