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Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Power Dissipation
- 625
- Birim Ağırlık
- 0.211644 oz
- Transistor Polarity
- N-Channel
- Pd Power Dissipation
- 625 W
- Gate Charge Qg Max Vgs
- 330 nC @ 10 V
- Paket
- Tube
- Qg Gate Charge
- 330 nC
- Current Continuous Drain Id25
- 100A (Tc)
- Rds On Max Id Vgs
- 18mOhm @ 50A, 10V
- Drain To Source Voltage Vdss
- 200 V
- Input Capacitance Ciss Max Vds
- 9880 pF @ 25 V
- Continuous Drain Current Id
- 100
- Ambalaj
- Tube
- Kılıf / Paket
- TO-247-3
- Fet Type
- N-Channel
- Number Of Channels
- 1 Channel
- Vgsth Max Id
- 4V @ 2.5mA
- Vgs Th Gatesource Threshold Voltage
- 2 V
- Fabrika Paket Adedi
- 1
- RoHS
- Details
- Configuration
- Single
- Montaj Stili
- Through Hole
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Seri
- POWER MOS V®
- Channel Mode
- Enhancement
- Rds On Drainsource Resistance
- 18 mOhms
- Vds Drainsource Breakdown Voltage
- 200 V
- Id Continuous Drain Current
- 100 A
- Tedarikçi Cihaz Paketi
- TO-264 [L]
- Maks. Çalışma Sıcaklığı
- + 150 C
- Ürün Durumu
- Active
- Channel Type
- N
- Minimum Operating Temperature
- - 55 C
- Temel Ürün No
- APT20M18
- Montaj Tipi
- Through Hole
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