APT18M80B

Teknik Özellikler

Power Dissipation Max

500W (Tc)

Package Body Material

PLASTIC/EPOXY

Input Capacitance Ciss Max Vds

3760 pF @ 25 V

Transistor Application

SWITCHING

Drainsource On Resistancemax

0.53 Ω

Case Connection

DRAIN

Jesd30 Code

R-PSFM-T3

Number Of Terminals

3

Minimum Operating Temperature

- 55 C

Typical Turnon Delay Time

21 ns

Montaj

Through Hole

Part Package Code

TO-247

Rds On Drainsource Resistance

530 mOhms

Maks. Çalışma Sıcaklığı

+ 150 C

Ürün Durumu

Active

Ihs Manufacturer

MICROSEMI CORP

Risk Rank

1.78

Forward Transconductance Min

17 S

Pin Sayısı

3

Turn On Delay Time

21 ns

Voltage Rating Dc

800 V

Transistor Element Material

SILICON

Input Capacitance

3.76 nF

Gate To Source Voltage Vgs

30 V

Rohs Code

Yes

Terminal Formu

THROUGH-HOLE

Vgsth Max Id

5V @ 1mA

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Qg Gate Charge

120 nC

Polaritychannel Type

N-CHANNEL

Lifecycle Status

Production (Last Updated: 2 months ago)

Birim Ağırlık

0.211644 oz

Temel Ürün No

APT18M80

Min. Çalışma Sıcaklığı

-55 °C

Operating Mode

ENHANCEMENT MODE

Reflow Temperaturemax S

NOT SPECIFIED

Tedarikçi Cihaz Paketi

TO-247 [B]

Montaj Stili

Through Hole

Vgs Gatesource Voltage

- 30 V, + 30 V

Vgs Th Gatesource Threshold Voltage

4 V