Adet bazlı fiyat
- 1+ adet$3.77
- 10+ adet$3.55
- 100+ adet$3.35
- 500+ adet$3.16
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Drain To Source Voltage Vdss
- 600 V
- Current Continuous Drain Id25
- 19A (Tc)
- Rds On Max Id Vgs
- 390mOhm @ 9A, 10V
- Input Capacitance Ciss Max Vds
- 3550 pF @ 25 V
- Ambalaj
- Tube
- Power Dissipation Max
- 335W (Tc)
- Transistor Polarity
- N-Channel
- Rds On Drainsource Resistance
- 310 mOhms
- Ürün Durumu
- Active
- Vds Drainsource Breakdown Voltage
- 600 V
- Maks. Çalışma Sıcaklığı
- + 150 C
- Transistor Type
- 1 N-Channel
- Minimum Operating Temperature
- - 55 C
- Montaj Tipi
- Through Hole
- Typical Turnon Delay Time
- 20 ns
- Montaj
- Through Hole
- Turn On Delay Time
- 20 ns
- Voltage Rating Dc
- 600 V
- Input Capacitance
- 3.55 nF
- Rise Time
- 23 ns
- Rds On Max
- 390 mΩ
- Turn Off Delay Time
- 60 ns
- Forward Transconductance Min
- 17 S
- Qg Gate Charge
- 90 nC
- Typical Turnoff Delay Time
- 60 ns
- Paket
- Tube
- Continuous Drain Current Id
- 19 A
- Fet Type
- N-Channel
- Gate To Source Voltage Vgs
- 30 V
- Number Of Channels
- 1 Channel
- Kılıf / Paket
- TO-247-3
- Vgsth Max Id
- 5V @ 1mA
- Kurşunsuz
- Lead Free
- Power Dissipation
- 335
- Lifecycle Status
- Production (Last Updated: 2 months ago)
- Birim Ağırlık
- 0.211644 oz
- Akım Değeri
- 18 A
- Pd Power Dissipation
- 335 W
- Fall Time
- 18 ns
- Gate Charge Qg Max Vgs
- 90 nC @ 10 V
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