Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Ambalaj
- Tube
- Input Capacitance Ciss Max Vds
- 4845 pF @ 25 V
- Current Continuous Drain Id25
- 17A (Tc)
- Rds On Max Id Vgs
- 800mOhm @ 9A, 10V
- Drain To Source Voltage Vdss
- 1000 V
- Qg Gate Charge
- 150 nC
- Typical Turnoff Delay Time
- 105 ns
- Paket
- Tube
- Vgsth Max Id
- 5V @ 1mA
- Number Of Channels
- 1 Channel
- Fet Type
- N-Channel
- Power Dissipation Max
- 625W (Tc)
- Kılıf / Paket
- TO-247-3
- Genişlik
- 16.26 mm
- Transistor Polarity
- N-Channel
- Birim Ağırlık
- 0.211644 oz
- Yükseklik
- 5.31 mm
- Gate Charge Qg Max Vgs
- 150 nC @ 10 V
- Fall Time
- 28 ns
- Pd Power Dissipation
- 625 W
- Tradename
- Power MOS 8
- Ürün Durumu
- Active
- Tedarikçi Cihaz Paketi
- TO-247 [B]
- Maks. Çalışma Sıcaklığı
- + 150 C
- Uzunluk
- 21.46 mm
- Vds Drainsource Breakdown Voltage
- 1 kV
- Id Continuous Drain Current
- 17 A
- Rds On Drainsource Resistance
- 670 mOhms
- Montaj Tipi
- Through Hole
- Drive Voltage Max Rds On Min Rds On
- 10V
- Temel Ürün No
- APT17F100
- Typical Turnon Delay Time
- 29 ns
- Minimum Operating Temperature
- - 55 C
- Rise Time
- 31 ns
- Vgs Max
- ±30V
- Fabrika Paket Adedi
- 1
- Vgs Th Gatesource Threshold Voltage
- 4 V
- Channel Mode
- Enhancement
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Montaj Stili
- Through Hole
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