APT1204R7BFLLG

Teknik Özellikler

Ds Breakdown Voltagemin

1200 V

Montaj

Through Hole

Package Style

FLANGE MOUNT

Fabrika Paket Adedi

1

Drain To Source Breakdown Voltage

1.2 kV

Kurşunsuz Kodu

Yes

Continuous Drain Current Id

3.5 A

REACH Uyumluluk Kodu

compliant

Max Junction Temperature Tj

150 °C

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Seri

POWER MOS 7®

JESD-609 Kodu

e1

Operating Temperaturemax

150 °C

Turn On Delay Time

7 ns

Lifecycle Status

Production (Last Updated: 2 months ago)

Vgs Max

±30V

Akım Değeri

3.5 A

Avalanche Energy Rating Eas

425 mJ

Risk Rank

1.41

Birim Ağırlık

0.211644 oz

Drive Voltage Max Rds On Min Rds On

10V

Input Capacitance Ciss Max Vds

715 pF @ 25 V

Input Capacitance

715 pF

Gate Charge Qg Max Vgs

31 nC @ 10 V

Turn Off Delay Time

20 ns

Maks. Çalışma Sıcaklığı

150 °C

Fet Type

N-Channel

Terminal Formu

THROUGH-HOLE

Kurşunsuz

Lead Free

Transistor Element Material

SILICON

Power Dissipation

135

Channel Type

N

Pulsed Drain Currentmax Idm

14 A

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

135W (Tc)

Drain Currentmax Id

3.5 A

Number Of Elements

1

Drain To Source Resistance

4.7 Ω

Reflow Temperaturemax S

NOT SPECIFIED

RoHS

Details