Adet bazlı fiyat
- 1+ adet$16.15
- 10+ adet$15.23
- 100+ adet$14.37
- 500+ adet$13.56
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Ürün Durumu
- Active
- Temel Ürün No
- APT1201
- Fabrika Paket Adedi
- 1
- Montaj Tipi
- Surface Mount
- Drain To Source Voltage Vdss
- 1200 V
- Minimum Operating Temperature
- - 55 C
- Tedarikçi Cihaz Paketi
- D3 [S]
- Rds On Drainsource Resistance
- 1.6 Ohms
- Transistor Polarity
- N-Channel
- Montaj Stili
- SMD/SMT
- Configuration
- Single
- Vgs Th Gatesource Threshold Voltage
- 2 V
- Qg Gate Charge
- 230 nC
- Paket
- Tube
- Seri
- POWER MOS V®
- Ambalaj
- Tube
- Continuous Drain Current Id
- 8
- Current Continuous Drain Id25
- 8A (Tc)
- Fet Type
- N-Channel
- Channel Mode
- Enhancement
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Gate Charge Qg Max Vgs
- 230 nC @ 10 V
- Input Capacitance Ciss Max Vds
- 3660 pF @ 25 V
- Birim Ağırlık
- 0.218699 oz
- Pd Power Dissipation
- 280 W
- Vds Drainsource Breakdown Voltage
- 1.2 kV
- Kılıf / Paket
- D3PAK-3
- Number Of Channels
- 1 Channel
- Rds On Max Id Vgs
- 1.6Ohm @ 4A, 10V
- Maks. Çalışma Sıcaklığı
- + 150 C
- Channel Type
- N
- Power Dissipation
- 280
- Vgsth Max Id
- 4V @ 1mA
- Id Continuous Drain Current
- 8 A
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