Fiyat için teklif alın
Adet ve teslim süresine göre fiyatlandırılır.
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Rds On Max Id Vgs
- 19mOhm @ 500mA, 10V
- Maks. Çalışma Sıcaklığı
- + 150 C
- Id Continuous Drain Current
- 75 A
- Power Dissipation
- 370
- Channel Type
- N
- Vgsth Max Id
- 4V @ 1mA
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Gate Charge Qg Max Vgs
- 300 nC @ 10 V
- Input Capacitance Ciss Max Vds
- 6120 pF @ 25 V
- Fet Type
- N-Channel
- Channel Mode
- Enhancement
- Vds Drainsource Breakdown Voltage
- 100 V
- Number Of Channels
- 1 Channel
- Kılıf / Paket
- TO-247-3
- Birim Ağırlık
- 0.211644 oz
- Pd Power Dissipation
- 370 W
- Transistor Polarity
- N-Channel
- Montaj Stili
- Through Hole
- Configuration
- Single
- Continuous Drain Current Id
- 75
- Ambalaj
- Tube
- Current Continuous Drain Id25
- 75A (Tc)
- Vgs Th Gatesource Threshold Voltage
- 2 V
- Qg Gate Charge
- 300 nC
- Paket
- Tube
- Seri
- POWER MOS V®
- Temel Ürün No
- APT10M19
- Fabrika Paket Adedi
- 1
- Ürün Durumu
- Active
- Rds On Drainsource Resistance
- 19 mOhms
- RoHS
- Details
- Drain To Source Voltage Vdss
- 100 V
- Montaj Tipi
- Through Hole
- Minimum Operating Temperature
- - 55 C
- Tedarikçi Cihaz Paketi
- TO-247 [B]
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