Adet bazlı fiyat
- 1+ adet$20.54
- 10+ adet$19.38
- 100+ adet$18.28
- 500+ adet$17.25
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Number Of Channels
- 1 Channel
- Kılıf / Paket
- TO-247-3 Variant
- Vds Drainsource Breakdown Voltage
- 1 kV
- Pd Power Dissipation
- 520 W
- Birim Ağırlık
- 0.422002 oz
- Input Capacitance Ciss Max Vds
- 7900 pF @ 25 V
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Gate Charge Qg Max Vgs
- 500 nC @ 10 V
- Channel Mode
- Enhancement
- Fet Type
- N-Channel
- Id Continuous Drain Current
- 21 A
- Vgsth Max Id
- 4V @ 2.5mA
- Power Dissipation
- 520
- Channel Type
- N
- Maks. Çalışma Sıcaklığı
- + 150 C
- Rds On Max Id Vgs
- 500mOhm @ 500mA, 10V
- RoHS
- Details
- Rds On Drainsource Resistance
- 500 mOhms
- Minimum Operating Temperature
- - 55 C
- Tedarikçi Cihaz Paketi
- T-MAX™ [B2]
- Drain To Source Voltage Vdss
- 1000 V
- Montaj Tipi
- Through Hole
- Fabrika Paket Adedi
- 1
- Temel Ürün No
- APT10050
- Ürün Durumu
- Active
- Current Continuous Drain Id25
- 21A (Tc)
- Ambalaj
- Tube
- Continuous Drain Current Id
- 21
- Seri
- POWER MOS V®
- Paket
- Tube
- Qg Gate Charge
- 335 nC
- Vgs Th Gatesource Threshold Voltage
- 4 V
- Montaj Stili
- Through Hole
- Transistor Polarity
- N-Channel
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