Adet bazlı fiyat
- 1+ adet$26.23
- 10+ adet$24.74
- 100+ adet$23.34
- 500+ adet$22.02
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Qg Gate Charge
- 186 nC
- Vgs Th Gatesource Threshold Voltage
- 3 V
- Seri
- POWER MOS 7®
- Paket
- Tube
- Current Continuous Drain Id25
- 28A (Tc)
- Continuous Drain Current Id
- 28
- Ambalaj
- Tube
- Transistor Polarity
- N-Channel
- Configuration
- Single
- Montaj Stili
- Through Hole
- Drain To Source Voltage Vdss
- 1000 V
- Montaj Tipi
- Through Hole
- Tedarikçi Cihaz Paketi
- TO-264 [L]
- Minimum Operating Temperature
- - 55 C
- Rds On Drainsource Resistance
- 350 mOhms
- RoHS
- Details
- Ürün Durumu
- Active
- Fabrika Paket Adedi
- 1
- Temel Ürün No
- APT10035
- Vgsth Max Id
- 5V @ 2.5mA
- Power Dissipation
- 690
- Channel Type
- N
- Id Continuous Drain Current
- 28 A
- Çalışma Sıcaklığı
- -55°C ~ 150°C (TJ)
- Rds On Max Id Vgs
- 350mOhm @ 14A, 10V
- Power Dissipation Max
- 690W (Tc)
- Maks. Çalışma Sıcaklığı
- + 150 C
- Drive Voltage Max Rds On Min Rds On
- 10V
- Birim Ağırlık
- 0.352740 oz
- Pd Power Dissipation
- 690 W
- Vds Drainsource Breakdown Voltage
- 1 kV
- Kılıf / Paket
- TO-264-3
- Number Of Channels
- 1 Channel
- Vgs Max
- ±30V
- Fet Type
- N-Channel
- Channel Mode
- Enhancement
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Gate Charge Qg Max Vgs
- 186 nC @ 10 V
- Input Capacitance Ciss Max Vds
- 5185 pF @ 25 V
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