Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Maks. Çalışma Sıcaklığı
- + 175 C
- Pd Power Dissipation
- 0.36 W
- Vgs Gatesource Breakdown Voltage
- - 40 V
- Technology
- Si
- Vds Drainsource Breakdown Voltage
- 40 V
- Montaj Stili
- Through Hole
- Maximum Drain Gate Voltage
- 40 V
- Fet Type
- N-Channel
- Id Continuous Drain Current
- - 0.1 nA
- Ürün Durumu
- Active
- Ürün Tipi
- JFETs
- Transistor Polarity
- N-Channel
- Paket
- Bulk
- Minimum Operating Temperature
- - 65 C
- Drainsource Current At Vgs0
- 15 mA
- Configuration
- Single
- Fabrika Paket Adedi
- 1
- RoHS
- N
- Tip
- JFET
- Rds On Drainsource Resistance
- 50 Ohms
- Kılıf / Paket
- TO-18-3
İlgili Ürünler
Stokta
Microsemi
0150SC-1250M
JFETs Transistors
Central Semiconductor Corp
2N2608
JFETs Transistors
Stokta
Microchip Technology
2N2608UB
JFETs Transistors
Stokta
Microchip Technology
2N2608UB/TR
JFETs Transistors
Microsemi Corporation
2N2609
JFETs Transistors
Stokta
Vishay
2N3819
JFETs Transistors
Stokta
Central Semiconductor
2N3819 APM PBFREE
JFETs Transistors
Stokta
Rochester Electronics
2N3819_Q
JFETs Transistors

