IXFX80N50P

Teknik Özellikler

Yayın Yılı

2006

Voltage Rated Dc

500V

Minimum Operating Temperature C

-55

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Montaj

Through Hole

RoHS Durumu

ROHS3 Compliant

Number Of Elements

1

Turn Off Delay Time

70 ns

Gate Charge Qg Max Vgs

197nC @ 10V

Maximum Continuous Drain Current A

80

Kılıf / Paket

TO-247-3

Fabrika Tedarik Süresi

30 Weeks

Package Width

5.21(Max)

Seri

HiPerFET™, PolarHT™

Drain To Source Breakdown Voltage

500V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Fall Time Typ

16 ns

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Maximum Drain Source Voltage V

500

Kurşunsuz Kodu

yes

Montaj Tipi

Through Hole

Pulsed Drain Currentmax Idm

200A

Category

Power MOSFET

JESD-609 Kodu

e1

Typical Turnon Delay Time Ns

25

Typical Fall Time Ns

16

Mounting

Through Hole

Parça Durumu

Active

Svhc Exceeds Threshold

Yes

Fet Type

N-Channel

Continuous Drain Current Id

80A

Gate To Source Voltage Vgs

30V

Maximum Gate Source Voltage V

±30

Svhc

Yes

Pin Sayısı

3

Drive Voltage Max Rds On Min Rds On

10V

Transistor Application

SWITCHING

Case Connection

DRAIN

Terminal Sayısı

3

Current Continuous Drain Id25

80A Tc