IXFX150N15

Teknik Özellikler

Kılıf / Paket

TO-247-3

Rds On Max Id Vgs

12.5m Ω @ 75A, 10V

Fabrika Tedarik Süresi

8 Weeks

Element Configuration

Single

Input Capacitance Ciss Max Vds

9100pF @ 25V

Seri

HiPerFET™

Drain To Source Breakdown Voltage

150V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Fall Time Typ

45 ns

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Kurşunsuz Kodu

yes

Ambalaj

Tube

Montaj

Through Hole

Terminal Kaplaması

Tin/Silver/Copper (Sn/Ag/Cu)

Yayın Yılı

2000

RoHS Durumu

RoHS Compliant

Power Dissipation Max

560W Tc

Operating Mode

ENHANCEMENT MODE

Number Of Elements

1

Drainsource On Resistancemax

0.0125Ohm

Gate Charge Qg Max Vgs

360nC @ 10V

Turn Off Delay Time

110 ns

Continuous Drain Current Id

150A

Parça Durumu

Obsolete

Fet Type

N-Channel

Gate To Source Voltage Vgs

20V

Drive Voltage Max Rds On Min Rds On

10V

Pin Sayısı

3

Power Dissipation

560W

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

60ns

Pin Sayısı

3

Case Connection

DRAIN

Transistor Application

SWITCHING

Terminal Sayısı

3

Vgs Max

±20V

Current Continuous Drain Id25

150A Tc

Pulsed Drain Currentmax Idm

600A