Fiyat için teklif alın
Adet ve teslim süresine göre fiyatlandırılır.
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Svhc
- Yes
- Maximum Gate Source Voltage V
- ±30
- Continuous Drain Current Id
- 120A
- Parça Durumu
- Active
- Svhc Exceeds Threshold
- Yes
- Transistor Polarity
- N-Channel
- Fet Type
- N-Channel
- Hts
- 8541.29.00.95
- Drive Voltage Max Rds On Min Rds On
- 10V
- Pin Sayısı
- 3
- Vgs Gatesource Voltage
- - 30 V, + 30 V
- Current Continuous Drain Id25
- 120A Tc
- Technology
- Si
- Category
- Power MOSFET
- Montaj Tipi
- Through Hole
- Typical Fall Time Ns
- 12
- Typical Turnon Delay Time Ns
- 39
- Mounting
- Through Hole
- Fabrika Tedarik Süresi
- 19 Weeks
- Kılıf / Paket
- TO-247-3
- Pd Power Dissipation
- 1.25 kW
- Seri
- HiPerFET™
- Package Width
- 5.21(Max)
- REACH Uyumluluk Kodu
- unknown
- Montaj Stili
- Through Hole
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Maximum Drain Source Voltage V
- 650
- Drain To Source Voltage Vdss
- 650V
- RoHS Durumu
- ROHS3 Compliant
- Montaj
- Through Hole
- Yayın Yılı
- 2015
- Minimum Operating Temperature C
- -55
- Maximum Gate Threshold Voltage V
- 5
- Minimum Operating Temperature
- - 55 C
- Maximum Continuous Drain Current A
- 120
- Gate Charge Qg Max Vgs
- 225nC @ 10V
- Automotive
- No
- Power Dissipation
- 1.25kW
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Typical Turnoff Delay Time Ns
- 82
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