IXFR36N50P

Teknik Özellikler

Transistor Element Material

SILICON

Ambalaj

Tube

Number Of Elements Per Chip

1

Maximum Power Dissipation Mw

156000

Typical Input Capacitance Vds Pf

5500@25V

Element Configuration

Single

Maximum Operating Temperature C

150

Package Height

21.34(Max)

Input Capacitance Ciss Max Vds

5500pF @ 25V

Rds On Max Id Vgs

190m Ω @ 18A, 10V

Drainsource Onvolt

500(V)

Typical Gate Charge Vgs Nc

93@10V

Maximum Drain Source Resistance Mohm

190@10V

Channel Mode

Enhancement

Configuration

Single

Pcb Changed

3

Operating Mode

ENHANCEMENT MODE

Operating Temperature Classification

Military

Power Dissipation Max

156W Tc

Akım Değeri

36A

Polarity

N

Vgs Max

±30V

Typical Gate Charge10v Nc

93

Ppap

No

Pin Sayısı

3

Material

Si

Typical Turnoff Delay Time Ns

82

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

23ns

Power Dissipation

156W

Automotive

No

Package Length

16.13(Max)

Typical Rise Time Ns

23

Tab

Tab

Kurşunsuz

Lead Free

Eu Rohs

Compliant with Exemption

Tip

Power MOSFET

Channel Type

N

Process Technology

HiperFET

Vgsth Max Id

5V @ 4mA