IXFR140N30P

Teknik Özellikler

Threshold Voltage

5V

Rds On Max Id Vgs

26m Ω @ 70A, 10V

Maximum Operating Temperature C

150

Element Configuration

Single

Package Height

21.34(Max)

Input Capacitance Ciss Max Vds

14800pF @ 25V

Transistor Element Material

SILICON

ECCN Kodu

EAR99

Maximum Power Dissipation Mw

300000

Number Of Elements Per Chip

1

Ambalaj

Tube

Typical Input Capacitance Vds Pf

14800@25V

Operating Mode

ENHANCEMENT MODE

Power Dissipation Max

300W Tc

Configuration

Single

Pcb Changed

3

Isolation Voltage

2.5kV

Maximum Drain Source Resistance Mohm

28@10V

Typical Gate Charge Vgs Nc

185@10V

Channel Mode

Enhancement

Automotive

No

Drain Currentmax Abs Id

70A

Material

Si

Typical Turnoff Delay Time Ns

100

Rise Time

30ns

Çalışma Sıcaklığı

-55°C~150°C TJ

Power Dissipation

300W

Pin Sayısı

3

Vgs Max

±20V

Typical Gate Charge10v Nc

185

Ppap

No

Radyasyon Dayanımı

No

Supplier Package

ISOPLUS 247

Additional Feature

AVALANCHE RATED, UL RECOGNIZED

Channel Type

N

Process Technology

HiperFET

Vgsth Max Id

5V @ 8mA

Tab

Tab

Kurşunsuz

Lead Free

Eu Rohs

Compliant with Exemption