IXFN80N50P

Teknik Özellikler

Vgs Max

±30V

Pin Sayısı

4

Direnç

55MOhm

Power Dissipation

700W

Çalışma Sıcaklığı

-55°C~150°C TJ

Rise Time

27ns

Kurşunsuz

Lead Free

Terminal Formu

UNSPECIFIED

Qualification Status

Not Qualified

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Vgsth Max Id

5V @ 8mA

Additional Feature

UL RECOGNIZED, AVALANCHE RATED

Transistor Element Material

SILICON

Ambalaj

Tube

Yükseklik

9.6mm

Element Configuration

Single

Input Capacitance Ciss Max Vds

12700pF @ 25V

Rds On Max Id Vgs

65m Ω @ 500mA, 10V

Power Dissipation Max

700W Tc

Operating Mode

ENHANCEMENT MODE

Akım Değeri

80A

Terminal Sayısı

4

Current Continuous Drain Id25

66A Tc

Case Connection

ISOLATED

Transistor Application

SWITCHING

Pin Sayısı

4

Drive Voltage Max Rds On Min Rds On

10V

Continuous Drain Current Id

66A

Fet Type

N-Channel

Parça Durumu

Active

Gate To Source Voltage Vgs

30V

Terminal Pozisyonu

UPPER

Turn On Delay Time

25 ns

Genişlik

25.07mm

Pulsed Drain Currentmax Idm

200A

Montaj Tipi

Chassis Mount

Kurşunsuz Kodu

yes

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

500V

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED