IXFN55N50

Teknik Özellikler

Reach Svhc

No SVHC

Fall Time Typ

45 ns

Number Of Elements

1

Nem Hassasiyeti (MSL)

1 (Unlimited)

Gate Charge Qg Max Vgs

330nC @ 10V

Continuous Drain Current Id

55A

Rise Time

60ns

Terminal Sayısı

4

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz Kodu

yes

Direnç

80mOhm

Radyasyon Dayanımı

No

Fet Type

N-Channel

Power Dissipation

600W

Operating Mode

ENHANCEMENT MODE

Additional Feature

AVALANCHE RATED

Current Continuous Drain Id25

55A Tc

Rds On Max Id Vgs

90m Ω @ 27.5A, 10V

Case Connection

DRAIN

Montaj Tipi

Chassis Mount

Seri

HiPerFET™

Gate To Source Voltage Vgs

20V

Terminal Kaplaması

Nickel (Ni)

Turn Off Delay Time

120 ns

Transistor Element Material

SILICON

Kılıf / Paket

SOT-227-4, miniBLOC

ECCN Kodu

EAR99

Input Capacitance Ciss Max Vds

9400pF @ 25V

RoHS Durumu

ROHS3 Compliant

Kurşunsuz

Lead Free

Weight

46g

Ambalaj

Tube

Nominal Vgs

4.5 V

Terminal Formu

UNSPECIFIED

Çalışma Sıcaklığı

-55°C~150°C TJ

Drain To Source Breakdown Voltage

500V

Transistor Application

SWITCHING

Jesd30 Code

R-PUFM-X4

Terminal Pozisyonu

UPPER

Terminal

Screw