IXFN48N50

Teknik Özellikler

Akım Değeri

48A

Current Continuous Drain Id25

48A Tc

Rds On Max Id Vgs

100m Ω @ 500mA, 10V

Operating Mode

ENHANCEMENT MODE

Power Dissipation

520W

Additional Feature

AVALANCHE RATED

Drive Voltage Max Rds On Min Rds On

10V

Kurşunsuz Kodu

yes

Direnç

100mOhm

Fet Type

N-Channel

Fall Time Typ

30 ns

Number Of Elements

1

Reach Svhc

No SVHC

Continuous Drain Current Id

48A

Gate Charge Qg Max Vgs

270nC @ 10V

Nem Hassasiyeti (MSL)

Not Applicable

Terminal Sayısı

4

HTS Kodu

8541.29.00.95

Rise Time

60ns

Qualification Status

Not Qualified

ECCN Kodu

EAR99

Turn Off Delay Time

100 ns

Transistor Element Material

SILICON

Kılıf / Paket

SOT-227-4, miniBLOC

Gate To Source Voltage Vgs

20V

Seri

HiPerFET™

Terminal Kaplaması

Nickel (Ni)

Case Connection

DRAIN

Configuration

SINGLE WITH BUILT-IN DIODE

Montaj Tipi

Chassis Mount

Voltage Rated Dc

500V

Jesd30 Code

R-PUFM-X4

Terminal Pozisyonu

UPPER

Power Dissipation Max

520W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Formu

UNSPECIFIED

Nominal Vgs

4 V

Drain To Source Breakdown Voltage

500V

Transistor Application

SWITCHING

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED