Fiyat için teklif alın
Adet ve teslim süresine göre fiyatlandırılır.
Sevkiyat
Stoktan aynı gün hazırlık
Orijinal ürün
Doğrulanmış tedarik
RoHS
Compliant
Destek
Teknik ekip desteği
Teknik Özellikler
- Maximum Gate Source Voltage V
- ±30
- Rds On Max Id Vgs
- 190m Ω @ 500mA, 10V
- Current Continuous Drain Id25
- 39A Tc
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 694W
- Maximum Operating Temperature C
- 150
- Supplier Package
- SOT-227B
- Standard Package Name
- SOT
- Additional Feature
- AVALANCHE RATED
- Category
- Power MOSFET
- Kurşunsuz Kodu
- yes
- Drive Voltage Max Rds On Min Rds On
- 10V
- Package Length
- 38.23(Max)
- Radyasyon Dayanımı
- No
- Fet Type
- N-Channel
- Pcb Changed
- 4
- Eccn Us
- EAR99
- Fall Time Typ
- 27 ns
- Number Of Elements
- 1
- Reach Svhc
- No SVHC
- Channel Type
- N
- Terminal Sayısı
- 4
- Rise Time
- 22ns
- Package Height
- 9.6(Max)
- Continuous Drain Current Id
- 39A
- Automotive
- No
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 200nC @ 10V
- ECCN Kodu
- EAR99
- Lead Shape
- Screw
- Maximum Drain Source Voltage V
- 800
- Transistor Element Material
- SILICON
- Turn Off Delay Time
- 75 ns
- Minimum Operating Temperature C
- -55
- Kılıf / Paket
- SOT-227-4, miniBLOC
- Terminal Kaplaması
- Nickel (Ni)
- Gate To Source Voltage Vgs
- 30V
- Typical Gate Charge10v Nc
- 200
- Seri
- PolarHV™
- Number Of Elements Per Chip
- 1
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